MOSFETs

High current density power MOSFETs are paralleled into a compact, high power module providing the best combination of switching, ruggedized design, very low on-resistance and cost effectiveness. The isolated SOT-227 package is preferred for all commercial-industrial applications at power dissipation levels to approximately higher than 500 W. The low thermal resistance and easy connection to the SOT-227 package contribute to its universal acceptance throughout the industry.

IGBT Module

MOSFETs Features

  • Fully isolated package
  • Very low on-resistance
  • Fully avalanche rated
  • Dynamic dV/dt rating
  • Low drain to case capacitance
  • Low internal inductance
  • Optimized for SMPS applications
  • Easy to use and parallel
  • Industry standard outline
  • Compliant to RoHS Directive 2002/95/EC
  • Designed and qualified for industrial level

Contact us today about our High current density power MOSFET products.

Thyristor Assembly, Rectifier Assembly, Heat Sink Assembly Rectifier, Diode Module, Hockey Puk Rectifier Thyristor Module, SCR, Silicon Controlled Rectifier Three Phase Bridge Rectifier IGBT Modules
Aluminum Housed Wire Wound Resistor, Thick Film Resistor Power Electronic Capacitors, Metalized Film Capacitor Heat Sinks, Extruded Heat Sink, Bonded Fin Heat Sink Semiconductor Clamp, Diode Clamp, SCR Clamp Power Semiconductors