Featured Products

C&H Technology introduces new power electronics products and technologies for the following industrial applications: welding, battery charging, steel, aluminum, mining water, waste treatment, forklifts, overhead cranes, industrial motor control, transportation, power generation, wind turbines, solar inverters, energy storage, electric power transmission / distribution and many others.

C&H Technology introduces our new High Fin Density Extruded Heat Sink!                      CHEH0057 Heat Sink 15 to 1 fin aspect ratio Thermal Performance .48 °C/W/3in (Natural Convection)  Thermal Performance .085 °C/W @ 500 LFM Thermal Performance .063 °C/W @ 1000 LFM Width 6.80 in Height 3.035 in Base Thickness 0.43 in Weight 10.05 lbs/ft

CHEH0057       High Fin Density Heat Sink

ADDITIONAL FEATURED PRODUCTS

Gen VII Power Module Series                Vishay Releases New Gen VII Power Module Series with Improved Current Ratings Up to 400 A, Reverse Voltages to 1600 V, Isolation Voltage of 3500 V, and Lighter Lead (Pb)-Free ADD-A-PAK Package. Devices Gain 20 % Improvement in Thermal Performance with Exposed Direct Bonded Copper Substrate More…	5th Generation Schottky Diode  Vishay Releases 5th Generation Family of High Performance 100 V. Schottky Diodes that offer Tj max of 175 °C for high termperature applications More…
Half Bridge IGBT Module Vishay Releases New Series of Half-Bridge 600-V and 1200-V IGBT Modules With High Current Ratings from 75 A to 200 A in Int-A-Pak Package More…	Thick Film Resistor Vishay Releases New 35W Thick Film Power Resistor With 0.01Ω To 550kΩ Resistance Range More…

Vishay Launches Gen VII Power Module Series with Improved Current Ratings Up to 400 A, Reverse Voltages to 1600 V, Isolation Voltage of 3500 V, and Lighter Lead (Pb)-Free ADD-A-PAK Package

Devices Gain 20 % Improvement in Thermal Performance with Exposed Direct Bonded Copper Substrate

MALVERN, PENNSYLVANIA. — Feb. 25, 2009 — Vishay Intertechnology, Inc. (NYSE: VSH) today unveiled its Gen VII series of general-purpose high-voltage power modules, which feature increased current handling capability, lighter weight, lower thermal resistance, improved reliability and a totally lead (Pb)-free construction.

Packaged in the TO-240AA-compatible ADD-A-PAK, the Gen VII modules each integrate two active components in series and include standard diode, thyristor/diode, thyristor/thyristor, and Schottky rectifier combinations.

The new devices feature a high blocking voltage of up to 1600 V, a high dV/dt of 1000 V/µs, a high RMS voltage isolation capability of 3500 V, and a high surge capability of up to 3000 A. In addition to standard products with the configurations and ratings mentioned above, custom versions of the Gen VII modules, which can accommodate silicon die with dimensions up to 500 mils by 500 mils, are readily available with customer-specified parameters to deliver outstanding performance in specific applications.

Beyond being entirely lead (Pb)-free and RoHS-compliant, the new package construction of the Gen VII power modules eliminates the traditional copper base plate and instead features an exposed direct bonded copper substrate, which improves thermal performance by 20 % and reduces product weight to just 75 g. An aluminum/copper clad wire bond interconnection improves reliability during power cycling and increases repeatability in the manufacturing process. The new construction also serves to eliminate certain process steps requiring the use of chemicals, and thus promotes cleaner and more environmentally-friendly manufacturing.

Vishay’s Gen VII power modules are typically used as the isolated power module in half-bridge, center-tab common anode, and common cathode configurations in high-voltage regulated power supplies, temperature and motor control circuits, uninterruptible power supplies (UPS), battery chargers, and many other industrial applications.

Current ratings for the Gen VII modules range from 26 A to 105 A for the diode and thyristor combinations and from 110 A to 400 A for the Schottky diode rectifier combinations. Reverse voltage ranges from 400 V to 1600 V for the diodes and thyristors and from 30 V to 150 V for the Schottky diode rectifiers. Maximum junction temperature ratings for modules range from 125 °C to 175 °C.

Gen VII Power Module Selected Product Specifications

Part number	Datasheet	Type	IT(AV) (A)	VRRM / VR (V)	TJ max (°C)
VSK.91..	94627	Standard Diodes	100	400 to 1600	150
VSK.91..	94632	Thyristor/Diode, Thyristor/Thyristor	95	400 to 1600	125
VSKU105.., VSKV105..	94656	Thyristor/Thyristor	105	400 to 1600	130
VSKDS440/030	94644	Schottky Rectifier	220	30	150

Generation VII of Diode and Thyristor Modules

Add-A-Pak Gen VII Power Modules

Samples and production quantities of Vishay’s Gen VII power modules available at C&H Technology Inc. Please call us at 1-800-274-4284 or contact us

^ TOP

5th Generation Schottky Diode

Vishay Releases 5th Generation Family of High-Performance 100-V Schottky Diodes That Offer Tj Max of +175 °C For High-Temperature Applications

Nine New Schottky Diode Devices Feature Very Low Typical Forward Voltage Drop From 0.55 V at 8 A to 0.61V at 30 A, Extremely Low Typical Reverse Leakage From 1 mA to 5.5 mA at 125 °C , and an Overall 30 % Increase in Power Density

MALVERN, PENNSYLVANIA — Jan. 30, 2008 — Vishay Intertechnology, Inc. (NYSE: VSH) today launched a new high-performance Schottky Diode Gen 5.0 silicon platform with eight new devices offering low forward voltage drop, low reverse leakage, and a high maximum junction temperature for high-temperature applications.

Featuring submicron trench technology, Vishay’s new family of Schottky diodes offers a maximum junction temperature of +175 °C, making them suitable for automotive and other high-temperature applications. The devices are offered in small RoHS-compliant packages for improved cost-to-power ratios, with a reverse biased safe operating area (RBSOA) available for tight and cost-effective designs. A high and stable breakdown voltage (>115 V) accommodates voltage spikes and optimizes power density, which is increased in the diodes by 30 % compared with previous-generation products. Even so, the new devices are priced up to 10% lower than Vishay’s planar Gen 3.1 and the planar Gen 2.0 devices.

The new Schottky diodes are optimized for ac-to-dc, secondary rectification, flyback, buck and boost converters, half-bridge, reverse battery protection, freewheeling, class-D amplifiers, and dc-to-dc module applications. Typical end products include high power density SMPS; adaptors for desktop PCs; servers; automotive drives and controls; telecom networks; consumer electronics like PDPs, LCDs, and high-efficiency audio systems; and mobile electronics such as notebook computers, cell phones, and portable media players.
The devices offer a very low typical forward voltage drop from 0.55 V at 8 A to 0.61 V at 30 A, and extremely low typical reverse leakage from 1 mA to 5.5 mA at 125 °C, with very tight parameter distribution. They feature increased ruggedness for reverse avalanche capability, with parts 100 % screened in avalanche, and negligible switching losses.

Device Specification Table

Device	IF(AV) (A)	@ TC (°C)	VFM@ 125°C (Typ) (V)	Reverse Leakage		EAS (mJ)	TJ Max (°C)	Package
				25 °C (µA)	Typ @ 125 °C (mA)
8TT100	8	163 °C	0.55 at 8 A	65	1	67	175 °C	TO-220AC
MBR10T100	10 A	159 °C	0.62 at 10 A	100	1.2	54	175 °C	TO-220AC
16CTT100	2x8 A	163 °C	0.55 at 8 A	65	1	67	175 °C	TO-220AB
MBR20T100CT	2x10 A	159 °C	0.62 at 10 A	100	1.2	54	175 °C	TO-220AB
20TT100	20 A	160 °C	0.63 at 20 A	150	3	67.5	175 °C	TO-220AC
43CTT100	2x20 A	160 °C	0.63 at 20 A	150	2.5	67.5	175 °C	TO-220AB
30PT100	30 A	156 °C	0.61 at 30 A	200	5.5	135	175 °C	TO-247
63CPT100	2x30 A	156 °C	0.61 at 30 A	200	5.5	135	175 °C	TO-247

Samples and production quantities of the new 5th generation family of Schottky diodes are available now, with lead times of eight to 10 weeks for larger orders.

^ TOP

Half Bridge IGBT Module

Vishay Releases New Series of Half-Bridge 600-V and 1200-V IGBT Modules With High Current Ratings from 75 A to 200 A in Int-A-Pak Package

Standard and Ultrafast Devices Offer Standard PT, Generation 4, and Generation 5 NPT IGBT Technologies for Hard Switching Operating Frequencies up to 60 kHz, and > 200 kHz in Resonant Mode

MALVERN, PENNSYLVANIA. — March 14, 2008 — Vishay Intertechnology, Inc. (NYSE: VSH) today launched a new series of half-bridge insulated-gate bipolar transistors (IGBT) in the industry-standard Int-A-Pak package. The IGBT module series consists of eight 600-V and 1200-V devices that offer a variety of technologies for high hard switching operating frequencies in standard and Ultrafast speeds.

The eight new devices released today feature three different IGBT technologies to meet a variety of application needs. The GA100TS60SFPbF and GA200HS60S1PbF offer standard punch-through (PT) IGBT technology, while the GA200TS60UPbF, GA75TS120UPbF, and GA100TS120UPbF devices utilize Generation 4 technology for tighter parameter distribution and high efficiency. The GB100TS60NPbF, GB150TS60NPbF, and GB200TS60NPbF modules offer Generation 5 non-punch-through (NPT) technology for the added benefit of 10-µs short circuit capabilities.

The GA100TS60SFPbF and GA200HS60S1PbF are standard-speed devices optimized for hard switching operating frequencies up to 1 kHz. The other six IGBTs modules are ultrafast modules co-packaged with HEXFRED® ultra-soft-recovery anti-parallel diodes for use in bridge configurations. The Ultrafast devices are designed for high operating frequencies from 8 kHz to 60 kHz in hard switching, and > 200 kHz in resonant mode.

Featuring high current ratings from 75 A to 200 A with low power losses, Vishay.s new IGBT series is optimized for isolated and non-isolated converters, switches, inverters, and choppers in high-frequency industrial welding, UPS, SMPS, solar inverter, and motor drive applications. For output inverter TIG welder applications, the IGBTs offer the lowest Vce(on) at rated current available in the market for “S” series modules.
 
The new IGBTs IGBT modules are lead (Pb)-free and provide simple, direct mounting to the heatsink. The devices offer low EMI for less snubbing, and provide very low junction to case thermal resistance.

Device Specification Table:

P/N	Speed	Technology	Voltage	IC	VCE(ON) typ.
GA100TS60SFPbF	Standard	Generation 4 PT	600 V	100 A	1.39 V
GA200HS60S1PbF	Standard	Generation 4 PT	600 V	200 A	1.13 V
GA200TS60UPbF	Ultrafast	Generation 4 PT	600 V	200 A	1.74 V
GA75TS120UPbF	Ultrafast	Generation 4 PT	1200 V	75 A	2.5 V
GA100TS120UPbF	Ultrafast	Generation 4 PT	1200 V	100 A	2.25 V
GB100TS60NPbF	Ultrafast	Generation 5 NPT	600 V	100 A	2.6 V
GB150TS60NPbF	Ultrafast	Generation 5 NPT	600 V	150 A	2.64 V
GB200TS60NPbF	Ultrafast	Generation 5 NPT	600 V	200 A	2.6 V

Samples and production quantities are available at C&H Technology Inc. Please call us at 1-800-274-4284 or contact us.

^ TOP

Thick Film Resistor

Vishay Releases New 35W Thick Film Power Resistor With 0.01Ω To 550kΩ Resistance Range
June 30, 2008

Vishay Intertechnology, Inc. released a new 35W thick film power resistor featuring what is described as a compact, easy-to-mount TO-263 package (D²PAK) and a broad range of resistance values.

The new D2TO35 thick film resistor is non-inductive and provides a wide resistance range of 0.01Ω to 550kΩ. Packaged in the small TO-263, which measures 10.1 x 10.4mm with a 4.5mm profile, it is claimed that the resistor saves valuable space on the circuit board, allowing designers to reduce the size of their end products.

The thick film resistor is intended for power supply, current sensing, power conversion, high-speed switching, RF, pulse generation, load resistor, snubber, pulse-handling circuit, and amplifier applications in end products including industrial welding machines, test equipment, UPS, locomotive, automotive, and base station systems.
Thermal resistance for the D2TO35 at 35W and +25°C is 4.28°C/W junction-to-case. The resistor features a standard temperature coefficient of ±150ppm/°C at resistance values of ≥ 0.5Ω, with standard tolerances of ±1% to ±10%.

Connections for the new thick film resistor are tinned copper, and they are specified for operation over a -55 to +175°C temperature range. The device is RoHS-compliant, and supports soldering temperatures at +270°C.

Samples and production quantities are available at C&H Technology Inc. Please call us at 1-800-274-4284 or contact us.

^ TOP