Featured Products

 

Vishay Power Modules

Vishay Power Modules

Three Phase Bridge Rectifier 5 Terminal

130A , 160A, 300A
1600V and 1800V

Features

  • Blocking voltage up to 1800 V
  • High surge capability
  • High thermal conductivity package, electrically insulated case
  • Excellent power volume ratio
  • 3600 VRMS isolating voltage
  • UL pending
  • Designed for industrial level
sales@chtechnology.com
800-274-4284
130MT160C
160MT160C
300MT160C
130MT180C
160MT180C
300MT180C

C&H Technology now offers IGBT Drivers

Plug & Play Drivers  / Driver Cores / Design support

 We are proud to join forces with
 Power Integrations: CT Concepts

              

Click Here for Brochure!

                                                             Click here for full catalog!

Plug-and-Play products are complete, ready-to-use IGBT drivers that have been tightly matched to a specific device. Drivers are available to cover a large selection of high-power and high-voltage IGBT modules with reverse voltages from 600 V to 6500 V. All plug-and-play drivers are equipped with DC/DC converters, short-circuit protection, active clamping, supply monitoring and more.
 

Driver Cores provide a highly flexible solution by including all commonly-required driver functions - including galvanic isolation, protection, DC/DC converter etc. Driver cores for IGBTs are available with blocking voltage capabilities from 600V to 6500V and from 1W to 20W per channel. They are also suitable for driving power MOSFETs and devices based on new materials (SiC) operating at switching frequencies up to 500 kHz.
 

Simple Solutions for your IGBT applications

Let us help with your IGBTs and plug & play driver solutions


 800-274-4284
 
sales@chtechnology.com

 


 

 IGBT Power Modules Offer Complete Integrated Solutions
 for Solar Inverters & UPS


Features & Benefits

  • Ultrafast Trench IGBT Technology
  • HEXFRED and silicon carbide diode technology
  • PressFit pins technology
  • Modular & scalable design to fit higher power level applications
  • Exposed Al2O3 substrate with low thermal resistance
  • Frequency up to 20 kHz
  • Low internal inductance and switching losses


Typical Applications

  • Solar Inverters
  • Uninterruptable Power Supplies

 

Part Numbers

 

Part #

VS-ENQ030L120S

VS-ETF075Y60U

VS-ETF150Y65U

VS-ETL015Y120H

VCES (V)

1200 / 600

600 / 600

650 / 650

1200

IC (A)

30

75

150

15

VRRM (V)

 

 

 

1200

IF (A)

 

 

 

62

Package

EMIPAK-1B

EMIPAK-2B

EMIPAK-2B

EMIPAK-2B

Circuit

3- level NPC topology

3-level half bridge inverter stage

3-level half bridge inverter stage

Double interleaved boost converter

 

 800-274-4284
 
sales@chtechnology.com



VS-100MT160P-P

MTP PressFit Power Module
 Three Phase Bridge Rectifier 100A 1600V
Download Datasheet
 Mounting Instructions
Drawings

Features

  • Low Vf
  • Low profile package
  • Direct mounting to heatsink
  • PressFit solderless pins
  • Low junction to case thermal resistance
  • 3500Vrms insulation voltage
  • UL approved file E78996


Typical Applications

  • Battery Chargers
  • Uninterruptable power supplies
  • Welding
  • SMPS
  • Motor Drives
  • General purpose and heavy duty applications

The new MTP module is easy to use thanks to the solderless method of contacting PressFit pins to the PCB. The low profile package has been specifically designed to maximize space and optimize the electrical layout of the application specific power supplies.

800-274-4284
sales@chtechnology.com



 

VS-GT300FD060N

 DIAP Low Profile 3-Levels Half-Bridge
Download Datasheet

     
Features

  • Trench plus Field Stop IGBT technology
  • FRED Pt antiparallel and clamping diodes
  • Short circuit capability
  • Speed 4 kHz to 30 kHz
  • Low stray inductances
  • Low switching loss
  • UL approved file E78996


Typical Applications

  • Solar converters
  • Uninterruptable power supplies

Benefits

  • Direct mounting on heat sink
  • Low junction-to-case thermal resistance
  • Easy paralleling due to positive Tc of VCE(sat)

DIAP low-profile modules are designed to provide reliable performance in rugged 300A to 400A industrial applications. A single housing is used to integrate power components providing higher power density. Various die selections are available in several configurations.

Vishay’s DIAP low-profile modules are distinguished by these key features:

  •  Fully isolated from the metal base, allowing common heatsink and compact assemblies to be built
  • Wire-bonded internal connections
  • Screwable electrical terminals secured against axial pull-outs. They are fixed to the module housing via a click-stop feature
  • Low junction-to-case thermal resistance
  • Protection against electrostatic discharge (ESD)  


 800-274-4284
sales@chtechnology.com

 


FB190SA10
New Generation
Power MOSFET, 190A


 High current density power MOSFETs are paralleled into a compact, high power module providing the
best combination of switching, ruggedized design, very low on resistance and cost effectiveness.

Features

  • Very low on– resistance
  • Very high current
  • Fully isolated package
  • Compact SO©\227 package
  • Easy to use parallel

 


Applications

  • Power Supply
  • DC/DC Converters
  • Micro welders
  • Hydraulics and Traction
  • Brushless Motors

800©\274©\4284
sales@chtechnology.com


 

C&H Technology introduces new power electronics products and technologies for the following industrial applications: welding, battery charging, steel, aluminum, mining water, waste treatment, forklifts, overhead cranes, industrial motor control, transportation, power generation, wind turbines, solar inverters, energy storage, electric power transmission / distribution and many others.

                                              Introducing Power Resistors!

Customer designs and standard products manufactured to the highest quality standards and industry leading delivery times.

Products Include:

  • Wattages up to 2000 W
  • Environmental Temperatures up to +415 °C
  • Tolerances down to +/- 1% 
  • Non-inductive winding available
  • Winding for high surge/joule applications
  • Custom Terminations available

 Ribwound / Roundwire / Edge-Power / Metal Case

                                                             Learn More Here!


ADDITIONAL FEATURED PRODUCTS


C&H Technology introduces our new Ultra High Fin

Density Extruded Heat Sink!

 

                   CHEH0077 Heat Sink

  • 16 to 1 fin aspect ratio
  • Thermal Performance .085 °C/W/6" @ 500 LFM
  • Thermal Performance .062 °C/W/6" @ 1000 LFM 
  • Width 6.382 in
  • Height 3.42 in
  • Base Thickness 0.526 in
  • Weight 8.86 lbs/ft
  • Performance 185/in2/in
GEN VII Power Module
                CHEH0077
      Ultra High Fin Density Heat Sink

GEN VII Power Module
Schottky Diodes

               Gen VII Power Module Series                Vishay Releases New Gen VII Power Module Series with Improved Current Ratings Up to 400 A, Reverse Voltages to 1600 V, Isolation Voltage of 3500 V, and Lighter Lead (Pb)-Free ADD-A-PAK Package. Devices Gain 20 % Improvement in Thermal Performance with Exposed Direct Bonded Copper Substrate

More

                5th Generation Schottky Diode 
Vishay Releases 5th Generation Family of High Performance 100 V. Schottky Diodes that offer Tj max of 175 °C for high termperature applications

More…

                 Half Bridge IGBT Module              Thick Film Resistor

                   Half Bridge IGBT Module
Vishay Releases New Series of Half-Bridge 600-V and 1200-V IGBT Modules With High Current Ratings from 75 A to 200 A in Int-A-Pak Package

More…

                     Thick Film Resistor
Vishay Releases New 35W Thick Film Power Resistor With 0.01¦¸ To 550k¦¸ Resistance Range

More…

Vishay Launches Gen VII Power Module Series with Improved Current Ratings Up to 400 A, Reverse Voltages to 1600 V, Isolation Voltage of 3500 V, and Lighter Lead (Pb)-Free ADD-A-PAK Package

Devices Gain 20 % Improvement in Thermal Performance with Exposed Direct Bonded Copper Substrate

MALVERN, PENNSYLVANIA. — Feb. 25, 2009 — Vishay Intertechnology, Inc. (NYSE: VSH) today unveiled its Gen VII series of general-purpose high-voltage power modules, which feature increased current handling capability, lighter weight, lower thermal resistance, improved reliability and a totally lead (Pb)-free construction.

Packaged in the TO-240AA-compatible ADD-A-PAK, the Gen VII modules each integrate two active components in series and include standard diode, thyristor/diode, thyristor/thyristor, and Schottky rectifier combinations.

The new devices feature a high blocking voltage of up to 1600 V, a high dV/dt of 1000 V/µs, a high RMS voltage isolation capability of 3500 V, and a high surge capability of up to 3000 A. In addition to standard products with the configurations and ratings mentioned above, custom versions of the Gen VII modules, which can accommodate silicon die with dimensions up to 500 mils by 500 mils, are readily available with customer-specified parameters to deliver outstanding performance in specific applications.

Beyond being entirely lead (Pb)-free and RoHS-compliant, the new package construction of the Gen VII power modules eliminates the traditional copper base plate and instead features an exposed direct bonded copper substrate, which improves thermal performance by 20 % and reduces product weight to just 75 g. An aluminum/copper clad wire bond interconnection improves reliability during power cycling and increases repeatability in the manufacturing process. The new construction also serves to eliminate certain process steps requiring the use of chemicals, and thus promotes cleaner and more environmentally-friendly manufacturing.

Vishay’s Gen VII power modules are typically used as the isolated power module in half-bridge, center-tab common anode, and common cathode configurations in high-voltage regulated power supplies, temperature and motor control circuits, uninterruptible power supplies (UPS), battery chargers, and many other industrial applications.

Current ratings for the Gen VII modules range from 26 A to 105 A for the diode and thyristor combinations and from 110 A to 400 A for the Schottky diode rectifier combinations. Reverse voltage ranges from 400 V to 1600 V for the diodes and thyristors and from 30 V to 150 V for the Schottky diode rectifiers. Maximum junction temperature ratings for modules range from 125 °C to 175 °C.

Gen VII Power Module Selected Product Specifications


Part number

Datasheet

Type

IT(AV) (A)

VRRM / VR (V)

TJ max (°C)

VSK.91..

94627

Standard Diodes

100

400 to 1600

150

VSK.91..

94632

Thyristor/Diode, Thyristor/Thyristor

95

400 to 1600

125

VSKU105.., VSKV105..

94656

Thyristor/Thyristor

105

400 to 1600

130

VSKDS440/030

94644

Schottky Rectifier

220

30

150

Generation VII of Diode and Thyristor Modules

Add-A-Pak Gen VII Power Modules

Samples and production quantities of Vishay’s Gen VII power modules available at C&H Technology Inc. Please call us at 1-800-274-4284 or contact us

^ TOP

5th Generation Schottky Diode

Vishay Releases 5th Generation Family of High-Performance 100-V Schottky Diodes That Offer Tj Max of +175 °C For High-Temperature Applications

Nine New Schottky Diode Devices Feature Very Low Typical Forward Voltage Drop From 0.55 V at 8 A to 0.61V at 30 A, Extremely Low Typical Reverse Leakage From 1 mA to 5.5 mA at 125 °C , and an Overall 30 % Increase in Power Density

MALVERN, PENNSYLVANIA — Jan. 30, 2008 — Vishay Intertechnology, Inc. (NYSE: VSH) today launched a new high-performance Schottky Diode Gen 5.0 silicon platform with eight new devices offering low forward voltage drop, low reverse leakage, and a high maximum junction temperature for high-temperature applications.

Featuring submicron trench technology, Vishay’s new family of Schottky diodes offers a maximum junction temperature of +175 °C, making them suitable for automotive and other high-temperature applications. The devices are offered in small RoHS-compliant packages for improved cost-to-power ratios, with a reverse biased safe operating area (RBSOA) available for tight and cost-effective designs. A high and stable breakdown voltage (>115 V) accommodates voltage spikes and optimizes power density, which is increased in the diodes by 30 % compared with previous-generation products. Even so, the new devices are priced up to 10% lower than Vishay’s planar Gen 3.1 and the planar Gen 2.0 devices.

The new Schottky diodes are optimized for ac-to-dc, secondary rectification, flyback, buck and boost converters, half-bridge, reverse battery protection, freewheeling, class-D amplifiers, and dc-to-dc module applications. Typical end products include high power density SMPS; adaptors for desktop PCs; servers; automotive drives and controls; telecom networks; consumer electronics like PDPs, LCDs, and high-efficiency audio systems; and mobile electronics such as notebook computers, cell phones, and portable media players.
The devices offer a very low typical forward voltage drop from 0.55 V at 8 A to 0.61 V at 30 A, and extremely low typical reverse leakage from 1 mA to 5.5 mA at 125 °C, with very tight parameter distribution. They feature increased ruggedness for reverse avalanche capability, with parts 100 % screened in avalanche, and negligible switching losses.

Device Specification Table


Device

IF(AV)
(A)

@ TC (°C)

VFM@ 125°C
(Typ) (V)

Reverse Leakage

EAS
(mJ)

TJ Max
(°C)

Package

25 °C (µA)

Typ @ 125 °C (mA)

8TT100

8

163 °C

0.55 at 8 A

65

1

67

175 °C

TO-220AC

MBR10T100

10 A

159 °C

0.62 at 10 A

100

1.2

54

175 °C

TO-220AC

16CTT100

2x8 A

163 °C

0.55 at 8 A

65

1

67

175 °C

TO-220AB

MBR20T100CT

2x10 A

159 °C

0.62 at 10 A

100

1.2

54

175 °C

TO-220AB

20TT100

20 A

160 °C

0.63 at 20 A

150

3

67.5

175 °C

TO-220AC

43CTT100

2x20 A

160 °C

0.63 at 20 A

150

2.5

67.5

175 °C

TO-220AB

30PT100

30 A

156 °C

0.61 at 30 A

200

5.5

135

175 °C

TO-247

63CPT100

2x30 A

156 °C

0.61 at 30 A

200

5.5

135

175 °C

TO-247

Samples and production quantities of the new 5th generation family of Schottky diodes are available now, with lead times of eight to 10 weeks for larger orders.

^ TOP

Half Bridge IGBT Module

Vishay Releases New Series of Half-Bridge 600-V and 1200-V IGBT Modules With High Current Ratings from 75 A to 200 A in Int-A-Pak Package

Standard and Ultrafast Devices Offer Standard PT, Generation 4, and Generation 5 NPT IGBT Technologies for Hard Switching Operating Frequencies up to 60 kHz, and > 200 kHz in Resonant Mode

MALVERN, PENNSYLVANIA. — March 14, 2008 — Vishay Intertechnology, Inc. (NYSE: VSH) today launched a new series of half-bridge insulated-gate bipolar transistors (IGBT) in the industry-standard Int-A-Pak package. The IGBT module series consists of eight 600-V and 1200-V devices that offer a variety of technologies for high hard switching operating frequencies in standard and Ultrafast speeds.

The eight new devices released today feature three different IGBT technologies to meet a variety of application needs. The GA100TS60SFPbF and GA200HS60S1PbF offer standard punch-through (PT) IGBT technology, while the GA200TS60UPbF, GA75TS120UPbF, and GA100TS120UPbF devices utilize Generation 4 technology for tighter parameter distribution and high efficiency. The GB100TS60NPbF, GB150TS60NPbF, and GB200TS60NPbF modules offer Generation 5 non-punch-through (NPT) technology for the added benefit of 10-µs short circuit capabilities.

The GA100TS60SFPbF and GA200HS60S1PbF are standard-speed devices optimized for hard switching operating frequencies up to 1 kHz. The other six IGBTs modules are ultrafast modules co-packaged with HEXFRED® ultra-soft-recovery anti-parallel diodes for use in bridge configurations. The Ultrafast devices are designed for high operating frequencies from 8 kHz to 60 kHz in hard switching, and > 200 kHz in resonant mode.

Featuring high current ratings from 75 A to 200 A with low power losses, Vishay.s new IGBT series is optimized for isolated and non-isolated converters, switches, inverters, and choppers in high-frequency industrial welding, UPS, SMPS, solar inverter, and motor drive applications. For output inverter TIG welder applications, the IGBTs offer the lowest Vce(on) at rated current available in the market for “S” series modules.
 
The new IGBTs IGBT modules are lead (Pb)-free and provide simple, direct mounting to the heatsink. The devices offer low EMI for less snubbing, and provide very low junction to case thermal resistance.

Device Specification Table:


P/N

Speed

Technology

Voltage

IC

VCE(ON) typ.

GA100TS60SFPbF

Standard

Generation 4 PT

600 V

100 A

1.39 V

GA200HS60S1PbF

Standard

Generation 4 PT

600 V

200 A

1.13 V

GA200TS60UPbF

Ultrafast

Generation 4 PT

600 V

200 A

1.74 V

GA75TS120UPbF

Ultrafast

Generation 4 PT

1200 V

75 A

2.5 V

GA100TS120UPbF

Ultrafast

Generation 4 PT

1200 V

100 A

2.25 V

GB100TS60NPbF

Ultrafast

Generation 5 NPT

600 V

100 A

2.6 V

GB150TS60NPbF

Ultrafast

Generation 5 NPT

600 V

150 A

2.64 V

GB200TS60NPbF

Ultrafast

Generation 5 NPT

600 V

200 A

2.6 V

Samples and production quantities are available at C&H Technology Inc. Please call us at 1-800-274-4284 or contact us.

^ TOP

Thick Film Resistor

Vishay Releases New 35W Thick Film Power Resistor With 0.01¦¸ To 550k¦¸ Resistance Range
June 30, 2008

Vishay Intertechnology, Inc. released a new 35W thick film power resistor featuring what is described as a compact, easy-to-mount TO-263 package (D²PAK) and a broad range of resistance values.

The new D2TO35 thick film resistor is non-inductive and provides a wide resistance range of 0.01¦¸ to 550k¦¸. Packaged in the small TO-263, which measures 10.1 x 10.4mm with a 4.5mm profile, it is claimed that the resistor saves valuable space on the circuit board, allowing designers to reduce the size of their end products.

The thick film resistor is intended for power supply, current sensing, power conversion, high-speed switching, RF, pulse generation, load resistor, snubber, pulse-handling circuit, and amplifier applications in end products including industrial welding machines, test equipment, UPS, locomotive, automotive, and base station systems.
Thermal resistance for the D2TO35 at 35W and +25°C is 4.28°C/W junction-to-case. The resistor features a standard temperature coefficient of ±150ppm/°C at resistance values of ¡Ý 0.5¦¸, with standard tolerances of ±1% to ±10%.

Connections for the new thick film resistor are tinned copper, and they are specified for operation over a -55 to +175°C temperature range. The device is RoHS-compliant, and supports soldering temperatures at +270°C.

Samples and production quantities are available at C&H Technology Inc. Please call us at 1-800-274-4284 or contact us.

^ TOP

Thyristor Assembly, Rectifier Assembly, Heat Sink Assembly Rectifier, Diode Module, Hockey Puk Rectifier Thyristor Module, SCR, Silicon Controlled Rectifier Three Phase Bridge Rectifier IGBT Modules
Aluminum Housed Wire Wound Resistor, Thick Film Resistor Power Electronic Capacitors, Metalized Film Capacitor Heat Sinks, Extruded Heat Sink, Bonded Fin Heat Sink Semiconductor Clamp, Diode Clamp, SCR Clamp Power Semiconductors